The comprehensive characterisation is one of many technical challenges in the fabrication of photovoltaic devices from novel materials. We show how the application of recent advances in MeV ion beam analysis, providing the selfconsistent treatment of Rutherford backscattering and particle induced X-ray emission spectra, makes a new set of powerful complementary elemental depth profiling techniques available for all thin film technologies, including the chalcopyrite compound semiconductors. We will give and discuss a detailed analysis of a CuInAl metallic precursor film, showing how similar methods are also applicable to other films of interest.
|Publication status||Published - 2009|
|Event||5th Photovoltaic Science Applications and Technology (PVSAT-5) - Glyndŵr University, Wrexham, UK|
Duration: 1 May 2009 → …
|Conference||5th Photovoltaic Science Applications and Technology (PVSAT-5)|
|Period||1/05/09 → …|