Emergence of near-zero temperature coefficient of resistance in the Mn3CuN antiperovskite thin film structure

Cecil Cherian Lukose; Guillaume Zoppi; Martin Birkett

doi:10.1016/j.apsusc.2025.162347

Emergence of near-zero temperature coefficient of resistance in the Mn3CuN antiperovskite thin film structure

Cecil Cherian Lukose, Guillaume Zoppi, Martin Birkett^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

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Abstract

Thin film material systems with extremely low temperature coefficient of resistance (TCR) are highly sought for the fabrication of high precision electronic devices to replace existing nichrome and tantalum nitride technologies. Using reactive magnetron sputtering in a mixed argon/nitrogen atmosphere we produced Mn3CuN antiperovskite thin film structures and by careful control of the deposition parameters, reveal the emergence of near-zero TCR values. Optimum properties were obtained for films deposited at 0.2–0.3 Pa in a 17 % partial nitrogen plasma environment and following heat treatment (nitrogen at 325 °C) and stabilisation (air at 260 °C), with average TCR values reaching −6 ppm/°C and resistance stability as low as 0.57 % for unprotected films. We present full compositional, morphological and structural characterisation of the films and demonstrate that dense and stable Mn3CuN antiperovskite structures can be successfully grown by reactive magnetron sputtering for the future development of high precision thin film resistive components.

Original language	English
Article number	162347
Pages (from-to)	1-9
Number of pages	21
Journal	Applied Surface Science
Volume	688
Early online date	9 Jan 2025
DOIs	https://doi.org/10.1016/j.apsusc.2025.162347
Publication status	Published - 15 Jan 2025

Keywords

Sputter deposition
Thin film
Antiperovskite
Heat treatment
Temperature coefficient of resistance

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10.1016/j.apsusc.2025.162347Licence: CC BY

1-s2.0-S0169433225000601-mainAccepted author manuscript, 4.3 MBLicence: CC BY
1-s2.0-S0169433225000601-mainFinal published version, 10.1 MBLicence: CC BY

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title = "Emergence of near-zero temperature coefficient of resistance in the Mn3CuN antiperovskite thin film structure",

abstract = "Thin film material systems with extremely low temperature coefficient of resistance (TCR) are highly sought for the fabrication of high precision electronic devices to replace existing nichrome and tantalum nitride technologies. Using reactive magnetron sputtering in a mixed argon/nitrogen atmosphere we produced Mn3CuN antiperovskite thin film structures and by careful control of the deposition parameters, reveal the emergence of near-zero TCR values. Optimum properties were obtained for films deposited at 0.2–0.3 Pa in a 17 \% partial nitrogen plasma environment and following heat treatment (nitrogen at 325 °C) and stabilisation (air at 260 °C), with average TCR values reaching −6 ppm/°C and resistance stability as low as 0.57 \% for unprotected films. We present full compositional, morphological and structural characterisation of the films and demonstrate that dense and stable Mn3CuN antiperovskite structures can be successfully grown by reactive magnetron sputtering for the future development of high precision thin film resistive components.",

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author = "\{Cherian Lukose\}, Cecil and Guillaume Zoppi and Martin Birkett",

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T1 - Emergence of near-zero temperature coefficient of resistance in the Mn3CuN antiperovskite thin film structure

AU - Cherian Lukose, Cecil

AU - Zoppi, Guillaume

AU - Birkett, Martin

PY - 2025/1/15

Y1 - 2025/1/15

N2 - Thin film material systems with extremely low temperature coefficient of resistance (TCR) are highly sought for the fabrication of high precision electronic devices to replace existing nichrome and tantalum nitride technologies. Using reactive magnetron sputtering in a mixed argon/nitrogen atmosphere we produced Mn3CuN antiperovskite thin film structures and by careful control of the deposition parameters, reveal the emergence of near-zero TCR values. Optimum properties were obtained for films deposited at 0.2–0.3 Pa in a 17 % partial nitrogen plasma environment and following heat treatment (nitrogen at 325 °C) and stabilisation (air at 260 °C), with average TCR values reaching −6 ppm/°C and resistance stability as low as 0.57 % for unprotected films. We present full compositional, morphological and structural characterisation of the films and demonstrate that dense and stable Mn3CuN antiperovskite structures can be successfully grown by reactive magnetron sputtering for the future development of high precision thin film resistive components.

AB - Thin film material systems with extremely low temperature coefficient of resistance (TCR) are highly sought for the fabrication of high precision electronic devices to replace existing nichrome and tantalum nitride technologies. Using reactive magnetron sputtering in a mixed argon/nitrogen atmosphere we produced Mn3CuN antiperovskite thin film structures and by careful control of the deposition parameters, reveal the emergence of near-zero TCR values. Optimum properties were obtained for films deposited at 0.2–0.3 Pa in a 17 % partial nitrogen plasma environment and following heat treatment (nitrogen at 325 °C) and stabilisation (air at 260 °C), with average TCR values reaching −6 ppm/°C and resistance stability as low as 0.57 % for unprotected films. We present full compositional, morphological and structural characterisation of the films and demonstrate that dense and stable Mn3CuN antiperovskite structures can be successfully grown by reactive magnetron sputtering for the future development of high precision thin film resistive components.

KW - Sputter deposition

KW - Thin film

KW - Antiperovskite

KW - Heat treatment

KW - Temperature coefficient of resistance

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U2 - 10.1016/j.apsusc.2025.162347

DO - 10.1016/j.apsusc.2025.162347

M3 - Article

SN - 0169-4332

VL - 688

SP - 1

EP - 9

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 162347

ER -

Emergence of near-zero temperature coefficient of resistance in the Mn3CuN antiperovskite thin film structure

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Keywords

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