Enhanced external quantum efficiency from Cu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inks

Yongtao Qu, Guillaume Zoppi, Laurence Peter, Neil Beattie, Sophie Jourdain

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Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. The selenium vapor pressure is controlled to optimize the morphology and quality of the CZTSSe thin film. The largest grains are formed at the highest selenium vapor pressure of 226mbar. Integrating this photovoltaic absorber layer in a conventional thin film solar cell structure yields a champion short circuit current of 37.9mA/cm2 without an antireflection coating. This stems from an improved external quantum efficiency characteristic in the visible and near-infrared part of the solar spectrum. The physical basis of this improvement is qualitatively attributed to a substantial increase in the minority carrier diffusion length.
Original languageEnglish
Article number08RC01
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume57
Issue number8S3
Early online date6 Jun 2018
DOIs
Publication statusPublished - Aug 2018

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