Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

Xiaobo Li; Feng Lin; Junye Wu; Zhiyue Zhang; Lijun Song; Taofei Pu; Xicong Li; Xinnan Lin; Youming Lu; Xinke Liu

doi:10.1109/ted.2022.3151563

Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

Xiaobo Li, Feng Lin, Junye Wu, Zhiyue Zhang, Lijun Song, Taofei Pu, Xicong Li, Xinnan Lin, Youming Lu, Xinke Liu^*

^*Corresponding author for this work

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, a Ni/GaN Schottky barrier diode (SBD) with both groove beveled and oxygen plasma terminations was fabricated and evaluated. The mixed termination structure was formed by inductive coupled plasma (ICP) in oxygen atmosphere. Confirmed by the measurement results of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), a 3.5-nm-thick GaOx passivation layer and beveled termination with an angle of 65° were identified around the edge of the electrode. Compared with the conventional samples, the treatment samples demonstrated the reverse leakage current reduced by one order of magnitude, the ON-resistance reduced by approximately 20%, and the breakdown voltage increased by 80%. Further technology computer-aided design (TCAD) simulation shows that the mixed termination structure can effectively inhibit the electric field concentration effect. Finally, temperature dependence characteristics show that the zero-temperature coefficient (ZTC) bias points of treatment samples locate in the low-voltage region, indicating that the devices are more suitable for the integrated circuit (IC).

Original language	English
Pages (from-to)	1792-1797
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	4
Early online date	24 Feb 2022
DOIs	https://doi.org/10.1109/ted.2022.3151563
Publication status	Published - 1 Apr 2022

Keywords

Anodes
GaN
Leakage currents
low leakage current
Optimized production technology
oxygen plasma treatment (OPT)
Passivation
Plasmas
Schottky barrier diode (SBD)
Schottky barriers
Schottky diodes
zero-temperature coefficient (ZTC).

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10.1109/ted.2022.3151563

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title = "Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment",

abstract = "In this study, a Ni/GaN Schottky barrier diode (SBD) with both groove beveled and oxygen plasma terminations was fabricated and evaluated. The mixed termination structure was formed by inductive coupled plasma (ICP) in oxygen atmosphere. Confirmed by the measurement results of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), a 3.5-nm-thick GaOx passivation layer and beveled termination with an angle of 65° were identified around the edge of the electrode. Compared with the conventional samples, the treatment samples demonstrated the reverse leakage current reduced by one order of magnitude, the ON-resistance reduced by approximately 20%, and the breakdown voltage increased by 80%. Further technology computer-aided design (TCAD) simulation shows that the mixed termination structure can effectively inhibit the electric field concentration effect. Finally, temperature dependence characteristics show that the zero-temperature coefficient (ZTC) bias points of treatment samples locate in the low-voltage region, indicating that the devices are more suitable for the integrated circuit (IC).",

keywords = "Anodes, GaN, Leakage currents, low leakage current, Optimized production technology, oxygen plasma treatment (OPT), Passivation, Plasmas, Schottky barrier diode (SBD), Schottky barriers, Schottky diodes, zero-temperature coefficient (ZTC).",

author = "Xiaobo Li and Feng Lin and Junye Wu and Zhiyue Zhang and Lijun Song and Taofei Pu and Xicong Li and Xinnan Lin and Youming Lu and Xinke Liu",

note = "Funding information: This work was supported in part by the National Natural Science Foundation of China under Grant 61974144 and Grant 62004127, in part by the Key-Area Research and Development Program of Guangdong Province under Grant 2020B010169001 and Grant 2020B010174003, in part by the Guangdong Science Foundation for Distinguished Young Scholars, the Science and Technology Foundation of Shenzhen under Grant JSGG20191129114216474, and in part by the Science and Technology Program of Ningbo, China, under Grant 2019B10129.",

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doi = "10.1109/ted.2022.3151563",

language = "English",

volume = "69",

pages = "1792--1797",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

AU - Li, Xiaobo

AU - Lin, Feng

AU - Wu, Junye

AU - Zhang, Zhiyue

AU - Song, Lijun

AU - Pu, Taofei

AU - Li, Xicong

AU - Lin, Xinnan

AU - Lu, Youming

AU - Liu, Xinke

N1 - Funding information: This work was supported in part by the National Natural Science Foundation of China under Grant 61974144 and Grant 62004127, in part by the Key-Area Research and Development Program of Guangdong Province under Grant 2020B010169001 and Grant 2020B010174003, in part by the Guangdong Science Foundation for Distinguished Young Scholars, the Science and Technology Foundation of Shenzhen under Grant JSGG20191129114216474, and in part by the Science and Technology Program of Ningbo, China, under Grant 2019B10129.

PY - 2022/4/1

Y1 - 2022/4/1

N2 - In this study, a Ni/GaN Schottky barrier diode (SBD) with both groove beveled and oxygen plasma terminations was fabricated and evaluated. The mixed termination structure was formed by inductive coupled plasma (ICP) in oxygen atmosphere. Confirmed by the measurement results of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), a 3.5-nm-thick GaOx passivation layer and beveled termination with an angle of 65° were identified around the edge of the electrode. Compared with the conventional samples, the treatment samples demonstrated the reverse leakage current reduced by one order of magnitude, the ON-resistance reduced by approximately 20%, and the breakdown voltage increased by 80%. Further technology computer-aided design (TCAD) simulation shows that the mixed termination structure can effectively inhibit the electric field concentration effect. Finally, temperature dependence characteristics show that the zero-temperature coefficient (ZTC) bias points of treatment samples locate in the low-voltage region, indicating that the devices are more suitable for the integrated circuit (IC).

AB - In this study, a Ni/GaN Schottky barrier diode (SBD) with both groove beveled and oxygen plasma terminations was fabricated and evaluated. The mixed termination structure was formed by inductive coupled plasma (ICP) in oxygen atmosphere. Confirmed by the measurement results of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), a 3.5-nm-thick GaOx passivation layer and beveled termination with an angle of 65° were identified around the edge of the electrode. Compared with the conventional samples, the treatment samples demonstrated the reverse leakage current reduced by one order of magnitude, the ON-resistance reduced by approximately 20%, and the breakdown voltage increased by 80%. Further technology computer-aided design (TCAD) simulation shows that the mixed termination structure can effectively inhibit the electric field concentration effect. Finally, temperature dependence characteristics show that the zero-temperature coefficient (ZTC) bias points of treatment samples locate in the low-voltage region, indicating that the devices are more suitable for the integrated circuit (IC).

KW - Anodes

KW - GaN

KW - Leakage currents

KW - low leakage current

KW - Optimized production technology

KW - oxygen plasma treatment (OPT)

KW - Passivation

KW - Plasmas

KW - Schottky barrier diode (SBD)

KW - Schottky barriers

KW - Schottky diodes

KW - zero-temperature coefficient (ZTC).

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U2 - 10.1109/ted.2022.3151563

DO - 10.1109/ted.2022.3151563

M3 - Article

AN - SCOPUS:85125291886

SN - 0018-9383

VL - 69

SP - 1792

EP - 1797

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

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Keywords

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