Exploring the effect of rf power in sputtering of aluminum thin films-a microstructure analysis

F. M. Mwema, E. T. Akinlabi, O. P. Oladijo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this article, a detailed image analysis on the field emission scanning electron microscopy of aluminum thin films sputtered on stainless steel substrates was presented. The effect of RF power on the structural and topography characteristics of the films was described. The physical observations of the surface micrographs, quantitative particle size and distribution, fractal dimensions, average surface roughness and widths of the multifractal spectra of all the films were related to the change in RF power. There existed a correlation between increasing RF power and fractal dimension and multifractal spectrum whereas there was no relationship established between power and height roughness of the films. Fractal and multifractal approaches appeared to provide better description of the effect of RF power on the sputtered Al thin films.

Original languageEnglish
Title of host publication4th North American IEOM Conference. IEOM 2019
PublisherIEOM Society
Pages745-750
Number of pages6
ISBN (Print)9781532359507
Publication statusPublished - 2019
Externally publishedYes
Event4th North American IEOM Conference. IEOM 2019 - Toronto, Canada
Duration: 23 Oct 201925 Oct 2019

Publication series

NameProceedings of the International Conference on Industrial Engineering and Operations Management
ISSN (Electronic)2169-8767

Conference

Conference4th North American IEOM Conference. IEOM 2019
Country/TerritoryCanada
CityToronto
Period23/10/1925/10/19

Keywords

  • Aluminum thin film
  • Power
  • Sputtering
  • Temperature

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