Facile nitrogen and sulfur deficient engineering on sulfur doped g-C3N4 for efficiently photocatalytic H2 evolution

Jinqiao Li, Xiaoteng Liu, Chunbo Liu, Huinan Che, Chunxiang Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Graphitic carbon nitride (g-C3N4) gets lots of attention as a promising candidate in solar energy conversion. However, the single modification method has limited effectiveness to access highly photocatalytic performance g-C3N4 catalyst. In this work, we present a facile method that can construct nitrogen and sulfur defects in the synthesis process of sulfur-doped g-C3N4. As results, nitrogen and sulfur deficient sulfur-doped g-C3N4 catalyst (SCND-x) integrate the advantages of these two modification methods. SCND-x exhibit a wide light absorption range and an efficient photocarriers separation ability. The optimal sample SCND-3 shows an excellent photocatalytic property with a hydrogen evolution rate of 70.2 μmol h−1 under visible light excitation (λ > 420 nm), which is about 23.4 times better than pristine g-C3N4 (MCN). And the apparent quantum efficiency of SCND-3 is up to 3.3% at 420 nm. In a word, we successfully practice a facile method to prepare high photocatalytic activity catalyst by introducing nitrogen and sulfur defects in sulfur-doped g-C3N4.

Original languageEnglish
Pages (from-to)93-102
Number of pages10
JournalJournal of the Taiwan Institute of Chemical Engineers
Volume117
Early online date24 Dec 2020
DOIs
Publication statusPublished - Dec 2020

Keywords

  • Graphitic carbon nitride
  • Nitrogen defects
  • One-step method
  • Photocatalytic hydrogen evolution
  • Sulfur defects
  • Sulfur-doped

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