The paper presents performance data for InP cells on the UoSAT-5 experiment after over three years in orbit (an equivalent radiation dose for Si cells of about 1014 e/ cm2). It is shown that the anomalous Voc losses observed for the ITO/InP cells after 500 days appear to have stabilised. Changes in Voc and Isc for the InP homojunction cells are as expected at the radiation dose received. Some of the cells have shown fill factor losses of 1-2% which have been attributed to the early stage of development for the contacting and bonding techniques. However, allowing for the contacting problems, the InP cells are behaving in agreement with the expectation of superior radiation resistance when compared to the GaAs and Si cells on the experiment.
|Journal||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Publication status||Published - 1994|