Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

Y.-L. D.  Ho; R.  Gibson; C. Y.  Hu; Martin J.  Cryan; J. G.  Rarity; P J Heard; J A  Timpson; A. M.  Fox; M. S.  Skolnick; M.  Hopkinson; A.  Tahraoui

doi:10.1116/1.2749528

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

Y.-L. D. Ho, R. Gibson, C. Y. Hu, Martin J. Cryan, J. G. Rarity, P J Heard, J A Timpson, A. M. Fox, M. S. Skolnick, M. Hopkinson, A. Tahraoui

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The authors demonstrate a simple approach for the construction of single photon sources utilizing focused ion beam (FIB) etching, a maskless fabrication technique. Here they use FIB with gas-assisted etching to fabricate micropillar microcavities from a GaAs∕AlGaAs distributed Bragg reflector planar cavity containing self-assembled InAs quantum dots. Using a 1.5μm square pillar, they demonstrate a single photon source where the two photon emission is suppressed by a factor of 3.8. They believe this to be the first example of a FIB fabricated pillar single photon source.

Original language	English
Pages (from-to)	1197 - 1202
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	4
Early online date	20 Jun 2007
DOIs	https://doi.org/10.1116/1.2749528
Publication status	Published - Jul 2007
Externally published	Yes

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Ho, Y.-L. D., Gibson, R., Hu, C. Y., Cryan, M. J., Rarity, J. G., Heard, P. J., Timpson, J. A., Fox, A. M., Skolnick, M. S., Hopkinson, M., & Tahraoui, A. (2007). Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(4), 1197 - 1202. https://doi.org/10.1116/1.2749528

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title = "Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials",

abstract = "The authors demonstrate a simple approach for the construction of single photon sources utilizing focused ion beam (FIB) etching, a maskless fabrication technique. Here they use FIB with gas-assisted etching to fabricate micropillar microcavities from a GaAs∕AlGaAs distributed Bragg reflector planar cavity containing self-assembled InAs quantum dots. Using a 1.5μm square pillar, they demonstrate a single photon source where the two photon emission is suppressed by a factor of 3.8. They believe this to be the first example of a FIB fabricated pillar single photon source.",

author = "Ho, {Y.-L. D.} and R. Gibson and Hu, {C. Y.} and Cryan, {Martin J.} and Rarity, {J. G.} and Heard, {P J} and Timpson, {J A} and Fox, {A. M.} and Skolnick, {M. S.} and M. Hopkinson and A. Tahraoui",

year = "2007",

month = jul,

doi = "10.1116/1.2749528",

language = "English",

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pages = "1197 -- 1202",

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issn = "1071-1023",

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number = "4",

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Ho, Y-LD, Gibson, R, Hu, CY, Cryan, MJ, Rarity, JG, Heard, PJ, Timpson, JA, Fox, AM, Skolnick, MS, Hopkinson, M & Tahraoui, A 2007, 'Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 4, pp. 1197 - 1202. https://doi.org/10.1116/1.2749528

TY - JOUR

T1 - Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

AU - Ho, Y.-L. D.

AU - Gibson, R.

AU - Hu, C. Y.

AU - Cryan, Martin J.

AU - Rarity, J. G.

AU - Heard, P J

AU - Timpson, J A

AU - Fox, A. M.

AU - Skolnick, M. S.

AU - Hopkinson, M.

AU - Tahraoui, A.

PY - 2007/7

Y1 - 2007/7

N2 - The authors demonstrate a simple approach for the construction of single photon sources utilizing focused ion beam (FIB) etching, a maskless fabrication technique. Here they use FIB with gas-assisted etching to fabricate micropillar microcavities from a GaAs∕AlGaAs distributed Bragg reflector planar cavity containing self-assembled InAs quantum dots. Using a 1.5μm square pillar, they demonstrate a single photon source where the two photon emission is suppressed by a factor of 3.8. They believe this to be the first example of a FIB fabricated pillar single photon source.

AB - The authors demonstrate a simple approach for the construction of single photon sources utilizing focused ion beam (FIB) etching, a maskless fabrication technique. Here they use FIB with gas-assisted etching to fabricate micropillar microcavities from a GaAs∕AlGaAs distributed Bragg reflector planar cavity containing self-assembled InAs quantum dots. Using a 1.5μm square pillar, they demonstrate a single photon source where the two photon emission is suppressed by a factor of 3.8. They believe this to be the first example of a FIB fabricated pillar single photon source.

U2 - 10.1116/1.2749528

DO - 10.1116/1.2749528

M3 - Article

SN - 1071-1023

VL - 25

SP - 1197

EP - 1202

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

Abstract

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