Abstract
The fabrication of Cu(In1-xAlx)Se2 using a multi-step process is reported. This process consists of depositing layers of Cu/Al/In, using magnetron sputtering, to form a metallic precursor layer, capping the stack with a layer of selenium, and then annealing in selenium vapour to synthesise the compound. The effects of annealing conditions on the chemical and physical properties of the converted layers were investigated. Rapid thermal processing at different temperatures indicated the formation of Cu(In1-xAlx)Se2 but only for annealing temperatures
| Original language | English |
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| Publication status | Published - 2010 |
| Event | 6th Photovoltaic Science Applications and Technology (PVSAT-6) - University of Southampton, United Kingdom Duration: 1 Jan 2010 → … |
Conference
| Conference | 6th Photovoltaic Science Applications and Technology (PVSAT-6) |
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| Period | 1/01/10 → … |