Formation of Cu(In1-xAlx)Se2 by selenising RF magnetron sputtered Cu/Al/In precursor layers

Rémi Aninat, Guillaume Zoppi, Ian Forbes, Robert Miles

Research output: Contribution to conferencePaperpeer-review

Abstract

The fabrication of Cu(In1-xAlx)Se2 using a multi-step process is reported. This process consists of depositing layers of Cu/Al/In, using magnetron sputtering, to form a metallic precursor layer, capping the stack with a layer of selenium, and then annealing in selenium vapour to synthesise the compound. The effects of annealing conditions on the chemical and physical properties of the converted layers were investigated. Rapid thermal processing at different temperatures indicated the formation of Cu(In1-xAlx)Se2 but only for annealing temperatures
Original languageEnglish
Publication statusPublished - 2010
Event6th Photovoltaic Science Applications and Technology (PVSAT-6) - University of Southampton, United Kingdom
Duration: 1 Jan 2010 → …

Conference

Conference6th Photovoltaic Science Applications and Technology (PVSAT-6)
Period1/01/10 → …

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