GaAsSbN for Multi-Junction Solar Cells

Asim Mumtaz; Malina Milanova; Ian Sandall; Kieran Cheetham; Zhongming Cao; Matthew Bilton; Giacomo Piana; Nicole Fleck; Laurie Phillips; Oliver Hutter; Vesselin Donchev; Ken Durose

doi:10.1109/PVSC45281.2020.9300524

GaAsSbN for Multi-Junction Solar Cells

Asim Mumtaz, Malina Milanova, Ian Sandall, Kieran Cheetham, Zhongming Cao, Matthew Bilton, Giacomo Piana, Nicole Fleck, Laurie Phillips, Oliver Hutter, Vesselin Donchev, Ken Durose

Mathematics, Physics and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

41 Downloads (Pure)

Abstract

Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.

Original language	English
Title of host publication	2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1799-1803
Number of pages	5
ISBN (Electronic)	9781728161150
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300524
Publication status	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Publication series

Name	IEEE Photovoltaic Specialists Conference
Publisher	IEEE
ISSN (Print)	0160-8371

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Keywords

GaAsSbN
III-V
liquid phase epitaxy
multi-junction solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC45281.2020.9300524

GaAsSbN for Multi-Junction Solar Cells PURE conference paperAccepted author manuscript, 716 KB

Cite this

Mumtaz, A., Milanova, M., Sandall, I., Cheetham, K., Cao, Z., Bilton, M., Piana, G., Fleck, N., Phillips, L., Hutter, O., Donchev, V., & Durose, K. (2020). GaAsSbN for Multi-Junction Solar Cells. In 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (pp. 1799-1803). Article 9300524 (IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC45281.2020.9300524

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abstract = "Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.",

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author = "Asim Mumtaz and Malina Milanova and Ian Sandall and Kieran Cheetham and Zhongming Cao and Matthew Bilton and Giacomo Piana and Nicole Fleck and Laurie Phillips and Oliver Hutter and Vesselin Donchev and Ken Durose",

note = "Research funded by University of Liverpool; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

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Mumtaz, A, Milanova, M, Sandall, I, Cheetham, K, Cao, Z, Bilton, M, Piana, G, Fleck, N, Phillips, L, Hutter, O, Donchev, V & Durose, K 2020, GaAsSbN for Multi-Junction Solar Cells. in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)., 9300524, IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., Piscataway, pp. 1799-1803, 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20. https://doi.org/10.1109/PVSC45281.2020.9300524

GaAsSbN for Multi-Junction Solar Cells. / Mumtaz, Asim; Milanova, Malina; Sandall, Ian et al.
2020 47th IEEE Photovoltaic Specialists Conference (PVSC). Piscataway: Institute of Electrical and Electronics Engineers Inc., 2020. p. 1799-1803 9300524 (IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Mumtaz, Asim

AU - Milanova, Malina

AU - Sandall, Ian

AU - Cheetham, Kieran

AU - Cao, Zhongming

AU - Bilton, Matthew

AU - Piana, Giacomo

AU - Fleck, Nicole

AU - Phillips, Laurie

AU - Hutter, Oliver

AU - Donchev, Vesselin

AU - Durose, Ken

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AB - Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.

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KW - liquid phase epitaxy

KW - multi-junction solar cells

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ER -

GaAsSbN for Multi-Junction Solar Cells

Abstract

Publication series

Conference

Keywords

UN SDGs

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