GaAsSbN for Multi-Junction Solar Cells

Asim Mumtaz, Malina Milanova, Ian Sandall, Kieran Cheetham, Zhongming Cao, Matthew Bilton, Giacomo Piana, Nicole Fleck, Laurie Phillips, Oliver Hutter, Vesselin Donchev, Ken Durose

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Abstract

Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1799-1803
Number of pages5
ISBN (Electronic)9781728161150
DOIs
Publication statusPublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Publication series

NameIEEE Photovoltaic Specialists Conference
PublisherIEEE
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period15/06/2021/08/20

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