TY - JOUR
T1 - Generation and relaxation of residual and recovery stress for sputtered TiNi films
AU - Fu, Yong Qing
AU - Du, Hejun
PY - 2003/10
Y1 - 2003/10
N2 - TiNi films with different Ti/Ni ratios were prepared by co-sputtering Ti50Ni50 (at%) target with Ti target at temperature of 723 K. The stress values in the deposited films changed significantly with Ti contents and postannealing temperatures due to the differences in phase transformation behaviors and intrinsic stress. Post-annealing of thèse films at 923 K for 1 hour could modify the intrinsic stress and martensite transformation behavior thus cause the significant decrease in residual stress. For all three types of film annealed at 1023 K for 1 hour, the large stress in the thin films could damage the shape memory effect or result in the peeling-off of film from Si substrate.
AB - TiNi films with different Ti/Ni ratios were prepared by co-sputtering Ti50Ni50 (at%) target with Ti target at temperature of 723 K. The stress values in the deposited films changed significantly with Ti contents and postannealing temperatures due to the differences in phase transformation behaviors and intrinsic stress. Post-annealing of thèse films at 923 K for 1 hour could modify the intrinsic stress and martensite transformation behavior thus cause the significant decrease in residual stress. For all three types of film annealed at 1023 K for 1 hour, the large stress in the thin films could damage the shape memory effect or result in the peeling-off of film from Si substrate.
UR - https://www.scopus.com/pages/publications/0242456374
U2 - 10.1051/jp4:20031016
DO - 10.1051/jp4:20031016
M3 - Article
SN - 1155-4339
SN - 1951-6401
VL - 112
SP - 857
EP - 860
JO - Journal de Physique IV - Proceedings
JF - Journal de Physique IV - Proceedings
ER -