Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells

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Original language	English
Pages (from-to)	763-770
Journal	Semiconductor Science and Technology
Volume	21
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/21/6/009
Publication status	Published - Jun 2006

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@article{0550edb7821b4c5b8cb2ee53dbcb5830,

title = "Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells",

author = "Guillaume Zoppi and Ken Durose and Stuart Irvine and Vincent Barrioz",

year = "2006",

month = jun,

doi = "10.1088/0268-1242/21/6/009",

language = "English",

volume = "21",

pages = "763--770",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells

AU - Zoppi, Guillaume

AU - Durose, Ken

AU - Irvine, Stuart

AU - Barrioz, Vincent

PY - 2006/6

Y1 - 2006/6

U2 - 10.1088/0268-1242/21/6/009

DO - 10.1088/0268-1242/21/6/009

M3 - Article

VL - 21

SP - 763

EP - 770

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

ER -