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Hexagonal Boron Nitride Based Photonic Quantum Technologies

Madhava Krishna Prasad, Mike P. C. Taverne, Chung-Che Huang*, Jonathan D. Mar*, Ying-Lung Daniel Ho

*Corresponding author for this work

    Research output: Contribution to journalReview articlepeer-review

    12 Citations (Scopus)
    111 Downloads (Pure)

    Abstract

    Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.
    Original languageEnglish
    Article number4122
    Number of pages29
    JournalMaterials
    Volume17
    Issue number16
    DOIs
    Publication statusPublished - 20 Aug 2024

    Keywords

    • hexagonal boron nitride
    • quantum photonics
    • single-photon emitters
    • spin qubits
    • electron paramagnetic resonance
    • optically detected magnetic resonance
    • density functional theory
    • chemical vapour deposition
    • molecular beam epitaxy
    • van der Waals epitaxy

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