Abstract
The fabrication of low-cost metal-insulator-metal (MIM) diodes using a self-assembled monolayer as the insulating layer is presented. DC and AC analysis show that the diodes have excellent non-linear current voltage characteristics compared to those typically reported, with a zero-bias curvature coefficient ranging from 0.5 V-1 to 5.4 V-1, voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The process developed for fabricating these diodes is simple, cost effective, and can potentially be used in the roll-to-roll manufacturing of MIM diodes. Reliability tests performed on the fabricated OTS diodes shows that the OTS layer of the diodes remains unaffected by high temperature up to approximately 450 °C which is significant in thermal energy harvesting applications, where the diode may be exposed to high temperatures.
| Original language | English |
|---|---|
| Title of host publication | 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) |
| Publisher | IEEE |
| ISBN (Electronic) | 978-1-4799-8272-1 |
| DOIs | |
| Publication status | Published - 23 Aug 2015 |
Publication series
| Name | 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) |
|---|---|
| ISSN (Print) | 2162-2027 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
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- 1 Article
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Conduction mechanisms in metal/self-assembled monolayer/metal junction
Etor, D., Dodd, L. E., Balocco, C. & Wood, D., 26 Jun 2019, In: Micro and Nano Letters. 14, 7, p. 808-811Research output: Contribution to journal › Article › peer-review
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