High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode

David Etor, Linzi Emma Dodd, Claudio Balocco

Research output: Contribution to journalArticlepeer-review

8 Downloads (Pure)


The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other results including current ratio and yield of the diode also competes favorably with the state-of-the-art MIM diodes such as the recently produced metal-octadecyltrichlorosilane (OTS)-metal structure.
Original languageEnglish
Number of pages5
JournalFUOYE Journal of Engineering and Technology
Issue number2
Publication statusPublished - 30 Jun 2022


Dive into the research topics of 'High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode'. Together they form a unique fingerprint.

Cite this