Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

Ochai Oklobia*, Steve Jones, Giray Kartopu, Dingyuan Lu, Wes Miller, Rajni Mallick, Xiaoping Li, Gang Xiong, Vladislav Kornienko, Ali Abbas, Martin Bliss, John Michael Walls, Stuart J C Irvine

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.
Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalIEEE Journal of Photovoltaics
Early online date22 Aug 2022
DOIs
Publication statusE-pub ahead of print - 22 Aug 2022

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