Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

Ochai Oklobia; Steve Jones; Giray Kartopu; Dingyuan Lu; Wes Miller; Rajni Mallick; Xiaoping Li; Gang Xiong; Vladislav Kornienko; Ali Abbas; Martin Bliss; John Michael Walls; Stuart J C Irvine

doi:10.1109/jphotov.2022.3195086

Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and V_OC

Ochai Oklobia^*, Steve Jones, Giray Kartopu, Dingyuan Lu, Wes Miller, Rajni Mallick, Xiaoping Li, Gang Xiong, Vladislav Kornienko, Ali Abbas, Martin Bliss, John Michael Walls, Stuart J C Irvine

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.

Original language	English
Pages (from-to)	1296-1302
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	12
Issue number	6
Early online date	22 Aug 2022
DOIs	https://doi.org/10.1109/jphotov.2022.3195086
Publication status	Published - 1 Nov 2022

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

As doping
Cd-saturated
CdTe
metal organic chemical vapour deposition (MOCVD)
open circuit voltage
solar cells
thin films

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Advance online versionFinal published version, 2.81 MBLicence: CC BY
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Cite this

@article{d1f4451169174093836dac09e8e4cba9,

title = "Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC",

abstract = "In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14\%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17\% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.",

keywords = "As doping, Cd-saturated, CdTe, metal organic chemical vapour deposition (MOCVD), open circuit voltage, solar cells, thin films",

author = "Ochai Oklobia and Steve Jones and Giray Kartopu and Dingyuan Lu and Wes Miller and Rajni Mallick and Xiaoping Li and Gang Xiong and Vladislav Kornienko and Ali Abbas and Martin Bliss and Walls, \{John Michael\} and Irvine, \{Stuart J C\}",

note = "Funding information: This work was supported in part by the Engineering and Physical Sciences Research Council, U.K. under Grant EP/W000555/1, in part by the European Regional Development Fund, in part by the Welsh European Funding Office for the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II), and in part by First Solar, Inc.",

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doi = "10.1109/jphotov.2022.3195086",

language = "English",

volume = "12",

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journal = "IEEE Journal of Photovoltaics",

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TY - JOUR

T1 - Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

AU - Oklobia, Ochai

AU - Jones, Steve

AU - Kartopu, Giray

AU - Lu, Dingyuan

AU - Miller, Wes

AU - Mallick, Rajni

AU - Li, Xiaoping

AU - Xiong, Gang

AU - Kornienko, Vladislav

AU - Abbas, Ali

AU - Bliss, Martin

AU - Walls, John Michael

AU - Irvine, Stuart J C

N1 - Funding information: This work was supported in part by the Engineering and Physical Sciences Research Council, U.K. under Grant EP/W000555/1, in part by the European Regional Development Fund, in part by the Welsh European Funding Office for the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II), and in part by First Solar, Inc.

PY - 2022/11/1

Y1 - 2022/11/1

N2 - In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.

AB - In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.

KW - As doping

KW - Cd-saturated

KW - CdTe

KW - metal organic chemical vapour deposition (MOCVD)

KW - open circuit voltage

KW - solar cells

KW - thin films

UR - https://www.scopus.com/pages/publications/85137577045

U2 - 10.1109/jphotov.2022.3195086

DO - 10.1109/jphotov.2022.3195086

M3 - Article

SN - 2156-3381

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JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

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