Investigating the Dynamic Performance of Power Semiconductors in Parallel Connection

Jixuan Wei, Jiajun Yu, Kun Tan, Hongfei Chen, Haimeng Wu, Paul Lefley, Bing Ji*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The parallel connection of power semiconductors is generally used for higher current levels. However, due to the design variations in both power devices and associated electrical circuits (such as parasitic inductances, parasitic capacitance), devices in parallel may result in unmatched current, voltage and power losses, degrading their overall switching performance and reliability as a whole. In this paper, the in-circuit switching behavior of power devices in the parallel configuration and their impacting factors are investigated using an analytical electrical model, which allows the current sharing and voltage balance behavior can be analyzed easily by changing parasitic parameters. The analytical model was verified by LTspice and shows an excellent match. Simulation results shows that the uneven common source inductance, gate resistance and gate capacitance has the greatest influence on current sharing.

Original languageEnglish
Title of host publicationConference Proceedings of 2021 International Joint Conference on Energy, Electrical and Power Engineering - Power Electronics, Energy Storage and System Control in Energy and Electrical Power Systems
EditorsCungang Hu, Wenping Cao, Pinjia Zhang, Zhenbin Zhang, Xi Tang
Place of PublicationSingapore
PublisherSpringer
Pages35-45
Number of pages11
ISBN (Print)9789811919213
DOIs
Publication statusPublished - 2022
EventInternational Joint Conference on Energy, Electrical and Power Engineering, CoEEPE 2021 - Frankfurt, Germany
Duration: 17 Sept 202119 Sept 2021

Publication series

NameLecture Notes in Electrical Engineering
Volume899
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Conference

ConferenceInternational Joint Conference on Energy, Electrical and Power Engineering, CoEEPE 2021
Country/TerritoryGermany
CityFrankfurt
Period17/09/2119/09/21

Keywords

  • Analytical model
  • Parallel connection
  • SiC MOSFET

Fingerprint

Dive into the research topics of 'Investigating the Dynamic Performance of Power Semiconductors in Parallel Connection'. Together they form a unique fingerprint.

Cite this