This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.
|Number of pages||6|
|Publication status||Accepted/In press - 27 Feb 2020|
|Event||PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives - Norttingham, Norttingham, United Kingdom|
Duration: 15 Dec 2020 → 17 Dec 2020
|Conference||PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives|
|Abbreviated title||PEMD 2020|
|Period||15/12/20 → 17/12/20|