Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Haimeng Wu*, Xiang Wang, Jose Ortiz-Gonzalez, Olayiwola Alatise, Volker Pickert

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Abstract

This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.
Original languageEnglish
Title of host publicationThe 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020
Place of PublicationStevenage
PublisherIET
Pages657–662
Number of pages6
ISBN (Print)9781839535420
DOIs
Publication statusPublished - 2021
EventPEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives - Norttingham, Norttingham, United Kingdom
Duration: 15 Dec 202017 Dec 2020
https://pemd.theiet.org/

Conference

ConferencePEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives
Abbreviated titlePEMD 2020
CountryUnited Kingdom
CityNorttingham
Period15/12/2017/12/20
Internet address

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