Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Haimeng Wu; Xiang Wang; Jose Ortiz-Gonzalez; Olayiwola Alatise; Volker Pickert

doi:10.1049/icp.2021.1290

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Haimeng Wu^*, Xiang Wang, Jose Ortiz-Gonzalez, Olayiwola Alatise, Volker Pickert

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

392 Downloads (Pure)

Abstract

This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.

Original language	English
Title of host publication	The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020
Place of Publication	Stevenage
Publisher	IET
Pages	657–662
Number of pages	6
ISBN (Print)	9781839535420
DOIs	https://doi.org/10.1049/icp.2021.1290
Publication status	Published - 2021
Event	PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives - Norttingham, Norttingham, United Kingdom Duration: 15 Dec 2020 → 17 Dec 2020 https://pemd.theiet.org/

Conference

Conference	PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives
Abbreviated title	PEMD 2020
Country/Territory	United Kingdom
City	Norttingham
Period	15/12/20 → 17/12/20
Internet address	https://pemd.theiet.org/

Keywords

SIC MOSFET
SWITCHING TRANSIENT
VOLTAGE-SOURCE
CURRENT-SOURCE
GATE DRIVER

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10.1049/icp.2021.1290

PEMD2020_Full_paper_Investigation of the SiC MOSFET switching transient_finalAccepted author manuscript, 506 KB

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title = "Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver",

abstract = "This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.",

keywords = "SIC MOSFET, SWITCHING TRANSIENT, VOLTAGE-SOURCE, CURRENT-SOURCE, GATE DRIVER",

author = "Haimeng Wu and Xiang Wang and Jose Ortiz-Gonzalez and Olayiwola Alatise and Volker Pickert",

year = "2021",

doi = "10.1049/icp.2021.1290",

language = "English",

isbn = "9781839535420",

pages = "657–662",

booktitle = "The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020",

publisher = "IET",

note = "PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives, PEMD 2020 ; Conference date: 15-12-2020 Through 17-12-2020",

url = "https://pemd.theiet.org/",

}

Wu, H, Wang, X, Ortiz-Gonzalez, J, Alatise, O & Pickert, V 2021, Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver. in The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020. IET, Stevenage, pp. 657–662, PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives, Norttingham, United Kingdom, 15/12/20. https://doi.org/10.1049/icp.2021.1290

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver. / Wu, Haimeng; Wang, Xiang; Ortiz-Gonzalez, Jose et al.
The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020. Stevenage: IET, 2021. p. 657–662.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

AU - Wu, Haimeng

AU - Wang, Xiang

AU - Ortiz-Gonzalez, Jose

AU - Alatise, Olayiwola

AU - Pickert, Volker

PY - 2021

Y1 - 2021

N2 - This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.

AB - This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.

KW - SIC MOSFET

KW - SWITCHING TRANSIENT

KW - VOLTAGE-SOURCE

KW - CURRENT-SOURCE

KW - GATE DRIVER

UR - https://www.scopus.com/pages/publications/85117721352

U2 - 10.1049/icp.2021.1290

DO - 10.1049/icp.2021.1290

M3 - Conference contribution

SN - 9781839535420

SP - 657

EP - 662

BT - The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020

PB - IET

CY - Stevenage

T2 - PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives

Y2 - 15 December 2020 through 17 December 2020

ER -

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

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Conference

Keywords

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