Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

Michael Yakushev, Pietro Maiello, Taavi Raadik, Martin Shaw, Paul Edwards, Jüri Krustok, Alexandre Mudryi, Ian Forbes, Robert Martin

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.
Original languageEnglish
Pages (from-to)166-172
JournalEnergy Procedia
Volume60
DOIs
Publication statusPublished - 2014

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