Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

Michael Yakushev; Pietro Maiello; Taavi Raadik; Martin Shaw; Paul Edwards; Jüri Krustok; Alexandre Mudryi; Ian Forbes; Robert Martin

doi:10.1016/j.egypro.2014.12.359

Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

Michael Yakushev, Pietro Maiello, Taavi Raadik, Martin Shaw, Paul Edwards, Jüri Krustok, Alexandre Mudryi, Ian Forbes, Robert Martin

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

Original language	English
Pages (from-to)	166-172
Journal	Energy Procedia
Volume	60
DOIs	https://doi.org/10.1016/j.egypro.2014.12.359
Publication status	Published - 2014

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@article{a6df12c56f1540888e88c3e2996a912e,

title = "Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films",

abstract = "The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.",

keywords = "Cu3BiS3, thin films, solar cells, raman spectroscopy, photoluminescence, photoreflectance",

author = "Michael Yakushev and Pietro Maiello and Taavi Raadik and Martin Shaw and Paul Edwards and J{\"u}ri Krustok and Alexandre Mudryi and Ian Forbes and Robert Martin",

year = "2014",

doi = "10.1016/j.egypro.2014.12.359",

language = "English",

volume = "60",

pages = "166--172",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier",

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TY - JOUR

T1 - Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

AU - Yakushev, Michael

AU - Maiello, Pietro

AU - Raadik, Taavi

AU - Shaw, Martin

AU - Edwards, Paul

AU - Krustok, Jüri

AU - Mudryi, Alexandre

AU - Forbes, Ian

AU - Martin, Robert

PY - 2014

Y1 - 2014

N2 - The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

AB - The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

KW - Cu3BiS3

KW - thin films

KW - solar cells

KW - raman spectroscopy

KW - photoluminescence

KW - photoreflectance

U2 - 10.1016/j.egypro.2014.12.359

DO - 10.1016/j.egypro.2014.12.359

M3 - Article

VL - 60

SP - 166

EP - 172

JO - Energy Procedia

JF - Energy Procedia

SN - 1876-6102

ER -