Investigations on SnS films deposited by spray pyrolysis

Kotte Ramakrishna Reddy; P. Purandar Reddy; Robert Miles; Psantu Datta

doi:10.1016/S0925-3467(01)00052-0

Investigations on SnS films deposited by spray pyrolysis

Kotte Ramakrishna Reddy, P. Purandar Reddy, Robert Miles, Psantu Datta

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.

Original language	English
Pages (from-to)	295-298
Journal	Optical Materials
Volume	17
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00052-0
Publication status	Published - Jun 2001

Keywords

Chemical spray pyrolysis
composition
electrical properties
optical band gap
structure
tin sulphide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/S0925-3467(01)00052-0

Cite this

@article{18b43954cd734f14aabea73143cbcf2f,

title = "Investigations on SnS films deposited by spray pyrolysis",

abstract = "Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.",

keywords = "Chemical spray pyrolysis, composition, electrical properties, optical band gap, structure, tin sulphide",

author = "{Ramakrishna Reddy}, Kotte and {Purandar Reddy}, P. and Robert Miles and Psantu Datta",

year = "2001",

month = jun,

doi = "10.1016/S0925-3467(01)00052-0",

language = "English",

volume = "17",

pages = "295--298",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Investigations on SnS films deposited by spray pyrolysis

AU - Ramakrishna Reddy, Kotte

AU - Purandar Reddy, P.

AU - Miles, Robert

AU - Datta, Psantu

PY - 2001/6

Y1 - 2001/6

N2 - Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.

AB - Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.

KW - Chemical spray pyrolysis

KW - composition

KW - electrical properties

KW - optical band gap

KW - structure

KW - tin sulphide

U2 - 10.1016/S0925-3467(01)00052-0

DO - 10.1016/S0925-3467(01)00052-0

M3 - Article

SN - 0925-3467

VL - 17

SP - 295

EP - 298

JO - Optical Materials

JF - Optical Materials

IS - 1-2

ER -

Investigations on SnS films deposited by spray pyrolysis

Abstract

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this