Investigations on SnS films deposited by spray pyrolysis

Kotte Ramakrishna Reddy; P. Purandar Reddy; Robert Miles; Psantu Datta

doi:10.1016/S0925-3467(01)00052-0

Investigations on SnS films deposited by spray pyrolysis

Kotte Ramakrishna Reddy, P. Purandar Reddy, Robert Miles, Psantu Datta

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.

Original language	English
Pages (from-to)	295-298
Journal	Optical Materials
Volume	17
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00052-0
Publication status	Published - Jun 2001

Keywords

Chemical spray pyrolysis
composition
electrical properties
optical band gap
structure
tin sulphide

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10.1016/S0925-3467(01)00052-0

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title = "Investigations on SnS films deposited by spray pyrolysis",

abstract = "Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong \{1 1 1\} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.",

keywords = "Chemical spray pyrolysis, composition, electrical properties, optical band gap, structure, tin sulphide",

author = "\{Ramakrishna Reddy\}, Kotte and \{Purandar Reddy\}, P. and Robert Miles and Psantu Datta",

year = "2001",

month = jun,

doi = "10.1016/S0925-3467(01)00052-0",

language = "English",

volume = "17",

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journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Investigations on SnS films deposited by spray pyrolysis

AU - Ramakrishna Reddy, Kotte

AU - Purandar Reddy, P.

AU - Miles, Robert

AU - Datta, Psantu

PY - 2001/6

Y1 - 2001/6

N2 - Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.

AB - Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spray solution consisted of tin chloride and thiourea dissolved in a mixture of isopropyl alcohol and water. The substrate temperature was varied in the range, 100-450°C. The films formed at growth temperatures between 300°C and 360°C were polycrystalline, single phase and nearly stoichiometric with a strong {1 1 1} preferential orientation. These films were p-conductivity type with an electrical resistivity of 30 Ω cm and a net carrier concentration of 1.2 × 1015 cm-3. These layers had a direct band gap of 1.32 eV. The films deposited at temperatures 360°C deviated from stoichiometry with other chemical phases present.

KW - Chemical spray pyrolysis

KW - composition

KW - electrical properties

KW - optical band gap

KW - structure

KW - tin sulphide

UR - https://www.scopus.com/pages/publications/0035360491

U2 - 10.1016/S0925-3467(01)00052-0

DO - 10.1016/S0925-3467(01)00052-0

M3 - Article

SN - 0925-3467

VL - 17

SP - 295

EP - 298

JO - Optical Materials

JF - Optical Materials

IS - 1-2

ER -

Investigations on SnS films deposited by spray pyrolysis

Abstract

Keywords

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