Sensing large strain using a mechanically actuated switch gate and a variable resistor surface creasing test structure is reported. Test structures with different gate and interconnect/wiring geometries have been designed, fabricated and characterised. They respond to designed strain values with a reduction in device resistivity of 11 to 12 orders of magnitude. Results from strain measurements ranging from 0.2 to 0.6 are reported for test structures with electrode spaces of 10 to 60 μm.
|Publication status||Published - Mar 2015|
|Event||International Conference on Microelectronic Test Structures (ICMTS) - Tempe, Arizona, US|
Duration: 1 Mar 2015 → …
|Conference||International Conference on Microelectronic Test Structures (ICMTS)|
|Period||1/03/15 → …|