Mechanically gated electrical switches by creasing of patterned metal/elastomer bilayer films

Ryan Hayward (Inventor), Dayong Chen (Inventor), Ben Xu (Inventor)

Research output: Patent

4 Downloads (Pure)

Abstract

Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, a flexible multilayer structure capable of undergoing large compressive deformation was prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to formation of an electrical connection in a reversible and reproducible fashion. A strain-gated electrical switch includes at least two conductive electrodes disposed on a surface of an elastomer substrate, the at least two conductive electrodes forming a gap between the at least two electrodes in an off-state of the strain-gated electrical switch, the gap diminishing under compressive strain to form a crease, the compressive strain pressing the at least two electrodes into contact with each other in an on-state of the strain-gated electrical switch.
Original languageEnglish
Publication statusPublished - 15 Oct 2015

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