Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Yang Liu, Tu Pei Chen, P. Zhao, Sam Zhang, Steve Fung, Yong Qing Fu

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Al-rich AlNthin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60nm Al-rich AlNthin film, a voltage of −15V applied to the metal electrode for 10−6s causes a flatband voltage shift of ∼1.5V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlNthin films provide the possibility of memory applications with low cost.
Original languageEnglish
Pages (from-to)033112
JournalApplied Physics Letters
Volume87
Issue number3
DOIs
Publication statusPublished - 2005

Fingerprint

Dive into the research topics of 'Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering'. Together they form a unique fingerprint.

Cite this