Metal-Insulator-Metal Diodes Fabricated on Flexible Substrates

David Etor; Linzi E. Dodd; David Wood; Claudio Balocco

doi:10.1109/IRMMW-THz.2016.7758643

Metal-Insulator-Metal Diodes Fabricated on Flexible Substrates

David Etor, Linzi E. Dodd, David Wood, Claudio Balocco

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

78 Downloads (Pure)

Abstract

The fabrication and testing of metal-insulator-metal (MIM) diodes on a flexible substrate for microwave and mm-wave applications are presented. The diodes utilized octadecyltrichlorosilane (OTS), which self assembles to form a thin, pin holes free insulator. Preliminary electrical analysis shows that the diodes have a typical zero bias resistance of approximately 80 kΩ, zero-bias curvature coefficient (γ_ZB) of approximately 5.5 V-1, and voltage responsivity of 3.1 kV/W at a frequency of 1 GHz, and are produced with over 90% device yield. The fabrication process is simple and cost effective, environmentally friendly, and demonstrates the possibility of roll-to-roll volume manufacturing of MIM diodes.

Original language	English
Title of host publication	41st International Conference on Infrared, Millimeter, and Terahertz waves
Subtitle of host publication	IRMMW-THz 2016
Publisher	IEEE
Number of pages	2
ISBN (Print)	9781467384858
DOIs	https://doi.org/10.1109/IRMMW-THz.2016.7758643
Publication status	Published - 1 Dec 2016
Event	41st International Conference on Infrared, Millimeter, and Terahertz waves - Bella Center, Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016 http://www.irmmw-thz2016.org/

Conference

Conference	41st International Conference on Infrared, Millimeter, and Terahertz waves
Abbreviated title	IRMMW-THz 2016
Country/Territory	Denmark
City	Copenhagen
Period	25/09/16 → 30/09/16
Internet address	http://www.irmmw-thz2016.org/

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

substrates
schottky diodes
insulators
resistance
polyimides
microwave devices
microwave imaging

Access to Document

10.1109/IRMMW-THz.2016.7758643

Etor et al - Metal-Insulator-Metal Diodes Fabricated on Flexible Substrates AAMAccepted author manuscript, 732 KB

Cite this

@inproceedings{3d00daf685014b198afc34b3d084190c,

title = "Metal-Insulator-Metal Diodes Fabricated on Flexible Substrates",

abstract = "The fabrication and testing of metal-insulator-metal (MIM) diodes on a flexible substrate for microwave and mm-wave applications are presented. The diodes utilized octadecyltrichlorosilane (OTS), which self assembles to form a thin, pin holes free insulator. Preliminary electrical analysis shows that the diodes have a typical zero bias resistance of approximately 80 kΩ, zero-bias curvature coefficient (γ\_ZB) of approximately 5.5 V-1, and voltage responsivity of 3.1 kV/W at a frequency of 1 GHz, and are produced with over 90\% device yield. The fabrication process is simple and cost effective, environmentally friendly, and demonstrates the possibility of roll-to-roll volume manufacturing of MIM diodes.",

keywords = "substrates, schottky diodes, insulators, resistance, polyimides, microwave devices, microwave imaging",

author = "David Etor and Dodd, \{Linzi E.\} and David Wood and Claudio Balocco",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/IRMMW-THz.2016.7758643",

language = "English",

isbn = "9781467384858",

booktitle = "41st International Conference on Infrared, Millimeter, and Terahertz waves",

publisher = "IEEE",

address = "United States",

note = "41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016 ; Conference date: 25-09-2016 Through 30-09-2016",

url = "http://www.irmmw-thz2016.org/",

}

TY - GEN

T1 - Metal-Insulator-Metal Diodes Fabricated on Flexible Substrates

AU - Etor, David

AU - Dodd, Linzi E.

AU - Wood, David

AU - Balocco, Claudio

PY - 2016/12/1

Y1 - 2016/12/1

N2 - The fabrication and testing of metal-insulator-metal (MIM) diodes on a flexible substrate for microwave and mm-wave applications are presented. The diodes utilized octadecyltrichlorosilane (OTS), which self assembles to form a thin, pin holes free insulator. Preliminary electrical analysis shows that the diodes have a typical zero bias resistance of approximately 80 kΩ, zero-bias curvature coefficient (γ_ZB) of approximately 5.5 V-1, and voltage responsivity of 3.1 kV/W at a frequency of 1 GHz, and are produced with over 90% device yield. The fabrication process is simple and cost effective, environmentally friendly, and demonstrates the possibility of roll-to-roll volume manufacturing of MIM diodes.

AB - The fabrication and testing of metal-insulator-metal (MIM) diodes on a flexible substrate for microwave and mm-wave applications are presented. The diodes utilized octadecyltrichlorosilane (OTS), which self assembles to form a thin, pin holes free insulator. Preliminary electrical analysis shows that the diodes have a typical zero bias resistance of approximately 80 kΩ, zero-bias curvature coefficient (γ_ZB) of approximately 5.5 V-1, and voltage responsivity of 3.1 kV/W at a frequency of 1 GHz, and are produced with over 90% device yield. The fabrication process is simple and cost effective, environmentally friendly, and demonstrates the possibility of roll-to-roll volume manufacturing of MIM diodes.

KW - substrates

KW - schottky diodes

KW - insulators

KW - resistance

KW - polyimides

KW - microwave devices

KW - microwave imaging

UR - https://www.scopus.com/pages/publications/85006091193

U2 - 10.1109/IRMMW-THz.2016.7758643

DO - 10.1109/IRMMW-THz.2016.7758643

M3 - Conference contribution

SN - 9781467384858

BT - 41st International Conference on Infrared, Millimeter, and Terahertz waves

PB - IEEE

T2 - 41st International Conference on Infrared, Millimeter, and Terahertz waves

Y2 - 25 September 2016 through 30 September 2016

ER -

Metal-Insulator-Metal Diodes Fabricated on Flexible Substrates

Abstract

Conference

UN SDGs

Keywords

Access to Document

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Conduction mechanisms in metal/self-assembled monolayer/metal junction

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