Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Andrew Clayton; Stuart Irvine; Vincent Barrioz; William Brooks; Guillaume Zoppi; Ian Forbes; Keith Rogers; David Lane; Kyle Hutchings; Scilla Roncallo

doi:10.1016/j.tsf.2010.12.147

Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Andrew Clayton, Stuart Irvine, Vincent Barrioz, William Brooks, Guillaume Zoppi, Ian Forbes, Keith Rogers, David Lane, Kyle Hutchings, Scilla Roncallo

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.

Original language	English
Pages (from-to)	7360-7363
Journal	Thin Solid Films
Volume	519
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2010.12.147
Publication status	Published - 2011

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10.1016/j.tsf.2010.12.147

Clayton 2011 -submitted versionSubmitted manuscript, 254 KB

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title = "Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure",

abstract = "Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.",

author = "Andrew Clayton and Stuart Irvine and Vincent Barrioz and William Brooks and Guillaume Zoppi and Ian Forbes and Keith Rogers and David Lane and Kyle Hutchings and Scilla Roncallo",

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pages = "7360--7363",

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T1 - Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

AU - Clayton, Andrew

AU - Irvine, Stuart

AU - Barrioz, Vincent

AU - Brooks, William

AU - Zoppi, Guillaume

AU - Forbes, Ian

AU - Rogers, Keith

AU - Lane, David

AU - Hutchings, Kyle

AU - Roncallo, Scilla

PY - 2011

Y1 - 2011

N2 - Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.

AB - Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.

U2 - 10.1016/j.tsf.2010.12.147

DO - 10.1016/j.tsf.2010.12.147

M3 - Article

SN - 0040-6090

VL - 519

SP - 7360

EP - 7363

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Abstract

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