Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Andrew Clayton, Stuart Irvine, Vincent Barrioz, William Brooks, Guillaume Zoppi, Ian Forbes, Keith Rogers, David Lane, Kyle Hutchings, Scilla Roncallo

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
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Abstract

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.
Original languageEnglish
Pages (from-to)7360-7363
JournalThin Solid Films
Volume519
Issue number21
DOIs
Publication statusPublished - 2011

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