Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Andrew Clayton; Stuart Irvine; Vincent Barrioz; William Brooks; Guillaume Zoppi; Ian Forbes; Keith Rogers; David Lane; Kyle Hutchings; Scilla Roncallo

doi:10.1016/j.tsf.2010.12.147

Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Andrew Clayton, Stuart Irvine, Vincent Barrioz, William Brooks, Guillaume Zoppi, Ian Forbes, Keith Rogers, David Lane, Kyle Hutchings, Scilla Roncallo

Research output: Contribution to journal › Article › peer-review

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Abstract

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.

Original language	English
Pages (from-to)	7360-7363
Journal	Thin Solid Films
Volume	519
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2010.12.147
Publication status	Published - 2011

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1016/j.tsf.2010.12.147

Clayton 2011 -submitted versionSubmitted manuscript, 254 KB

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title = "Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure",

abstract = "Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.",

author = "Andrew Clayton and Stuart Irvine and Vincent Barrioz and William Brooks and Guillaume Zoppi and Ian Forbes and Keith Rogers and David Lane and Kyle Hutchings and Scilla Roncallo",

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language = "English",

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pages = "7360--7363",

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T1 - Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

AU - Clayton, Andrew

AU - Irvine, Stuart

AU - Barrioz, Vincent

AU - Brooks, William

AU - Zoppi, Guillaume

AU - Forbes, Ian

AU - Rogers, Keith

AU - Lane, David

AU - Hutchings, Kyle

AU - Roncallo, Scilla

PY - 2011

Y1 - 2011

N2 - Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.

AB - Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/ CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p–n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process.

UR - https://www.scopus.com/pages/publications/80052148688

U2 - 10.1016/j.tsf.2010.12.147

DO - 10.1016/j.tsf.2010.12.147

M3 - Article

SN - 0040-6090

VL - 519

SP - 7360

EP - 7363

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p–i–n structure

Abstract

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