MOCVD of SnSx thin films for solar cell application

Andrew Clayton, Stuart Irvine, Vincent Barrioz, Alessia Masciullo

Research output: Contribution to journalArticlepeer-review

Abstract

An inline metal organic chemical vapor deposition system was used to deposit tin sulfide at temperatures >500 °C. Tetramethyltin was used as the tin source and diethyldisulfide as the sulfur source. An overhead injector configuration was used delivering both precursors directly over the substrate. The tin and sulfur precursors were premixed before injection to improve chemical reaction in the gas phase. Growth temperatures 500 – 540 °C were employed producing films with approximate 1:1 stoichiometry of Sn and S detected by energy dispersive x-ray spectroscopy. X-ray diffraction showed there to be mixed phases with Sn2S3 present with SnS.
Original languageEnglish
JournalMRS Proceedings
Volume1738
DOIs
Publication statusPublished - 2015

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