We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.
|Number of pages||1|
|Journal||Review of Scientific Instruments|
|Publication status||Published - 1 Feb 2005|