Nanometer scale patterning using focused ion beam milling

D. Petit; C. C. Faulkner; S. Johnstone; David Wood; R. P. Cowburn

doi:10.1063/1.1844431

Nanometer scale patterning using focused ion beam milling

D. Petit, C. C. Faulkner, S. Johnstone, David Wood, R. P. Cowburn

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24 Citations (Scopus)

Abstract

We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.

Original language	English
Pages (from-to)	026105
Number of pages	1
Journal	Review of Scientific Instruments
Volume	76
Issue number	2
DOIs	https://doi.org/10.1063/1.1844431
Publication status	Published - 1 Feb 2005

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10.1063/1.1844431

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title = "Nanometer scale patterning using focused ion beam milling",

abstract = "We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.",

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AU - Petit, D.

AU - Faulkner, C. C.

AU - Johnstone, S.

AU - Wood, David

AU - Cowburn, R. P.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.

AB - We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.

UR - https://www.scopus.com/pages/publications/13744253779

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SN - 0034-6748

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IS - 2

ER -

Nanometer scale patterning using focused ion beam milling

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