TY - JOUR
T1 - Na2CaV4O12
T2 - A low-temperature-firing dielectric with lightweight, low relative permittivity, and dielectric anomaly around 515 oC
AU - Liu, Caige
AU - Wu, Shuangfeng
AU - Liu, Laijun
AU - Lei, Xiuyun
AU - Xu, Jungu
AU - Khaliq, Jibran
AU - Li, Chunchun
N1 - Funding Information: The authors gratefully acknowledge the financial support from the Natural Science Foundation of China (No. 62061011 ), Natural Science Foundation of Guangxi Zhuang Autonomous Region (No. 2018GXNSFAA281253 ), and the high-level innovation team and outstanding scholar program of Guangxi institutes.
PY - 2022/3/1
Y1 - 2022/3/1
N2 - A low temperature fired Na2CaV4O12 ceramic was synthesized via a solid-state reaction route at a temperature range of 350–550 °C. The Thermal analysis confirmed the densification and melting temperature of Na2CaV4O12 to be 530 °C and 580 °C, respectively. Dielectric properties together with the electrical conductivity were characterized at a broad frequency and temperature range. A super-low relative permittivity of εr = 7.72 and loss tangent of tanδ = 0.06 were obtained at 1 MHz at room temperature. A dielectric anomaly peak took place around 515 °C, which was associated with the phase transition from P4/nbm to P 4‾ b2. Ac impedance spectrum coupled with complex modulus plots unveiled the electrical conduction mechanism, which was dominated by the short-range movement of the charge carriers at low temperatures (T ≤ 220 °C) however long-range migration of charge carriers emerged at higher temperatures.
AB - A low temperature fired Na2CaV4O12 ceramic was synthesized via a solid-state reaction route at a temperature range of 350–550 °C. The Thermal analysis confirmed the densification and melting temperature of Na2CaV4O12 to be 530 °C and 580 °C, respectively. Dielectric properties together with the electrical conductivity were characterized at a broad frequency and temperature range. A super-low relative permittivity of εr = 7.72 and loss tangent of tanδ = 0.06 were obtained at 1 MHz at room temperature. A dielectric anomaly peak took place around 515 °C, which was associated with the phase transition from P4/nbm to P 4‾ b2. Ac impedance spectrum coupled with complex modulus plots unveiled the electrical conduction mechanism, which was dominated by the short-range movement of the charge carriers at low temperatures (T ≤ 220 °C) however long-range migration of charge carriers emerged at higher temperatures.
KW - Ac impedance spectrum
KW - Ceramics
KW - Dielectric properties
KW - Thermal analysis
UR - http://www.scopus.com/inward/record.url?scp=85120743706&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2021.11.244
DO - 10.1016/j.ceramint.2021.11.244
M3 - Article
AN - SCOPUS:85120743706
SN - 0272-8842
VL - 48
SP - 6899
EP - 6904
JO - Ceramics International
JF - Ceramics International
IS - 5
ER -