Nitrogen-doped graphite-like carbon derived from phthalonitrile resin with controllable negative magnetoresistance and negative permittivity

Junling Zeng, Wenhao Xie, Heng Zhou*, Tong Zhao, Ben Bin Xu, Qinglong Jiang, Hassan Algadi, Zhenyu Zhou*, Hongbo Gu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)
2 Downloads (Pure)

Abstract

Herein, a nitrogen-doped graphite-like carbon material derived from hybrid phthalonitrile (PN) resin with controllable carbon microstructures including crystalline structures, hybridized carbon configurations, degree of disorder and nitrogen species such as pyridinic N, pyrrolic N, and graphitic N has been manufactured by high temperature annealing method. By simply altering these carbon microstructures through annealing temperature, the lowest resistivity of 1.76 ·cm at 290 K, the negative MR value of -6.10% at a magnetic field of 9 T and negative permittivity over -105 at low frequency are achieved in the semiconducting nitrogen-doped graphite-like carbon material. The results confirm the decreasing degree of disorder attained from Raman spectroscopy, the increasing ratio of sp2 and sp3 hybridized carbon, i.e. C(sp2)/C(sp3), from X-ray photoelectron spectroscopy (XPS), and the rise of charge carrier mobility with increasing the magnetic field from Hall-effect measurement are responsible for the negative MR effect in this nitrogen-doped graphite-like carbon material. The negative permittivity is attributed to the plasma oscillation with delocalized charge carriers by Drude model and the greatly increasing graphitic N in the carbon microstructures. This work opens a new insight for the applications of carbonized PN resins in the electronic device field.
Original languageEnglish
Article number64
JournalAdvanced Composites and Hybrid Materials
Volume6
Issue number2
Early online date16 Mar 2023
DOIs
Publication statusPublished - 1 Apr 2023

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