Numerical simulation of the deposition process and the epitaxial growth of cadmium telluride thin film in a MOCVD reactor

Chemistry

• Metallorganic Chemical Vapor Deposition 100%
• Liquid Film 80%
• Deposition Process 80%
• Reactor 80%
• Reaction Temperature 60%
• Procedure 60%
• Gas 60%
• Simulation 60%
• Cadmium 60%
• Computational Fluid Dynamics 60%
• Reaction Mechanism 40%
• Chemical Kinetics Characteristics 40%
• Mass Transfer 40%
• Pressure 20%
• Rate 20%
• Optimization 20%
• Group 20%
• Chemical Reaction 20%
• Partial Pressure 20%
• Reactive Intermediate 20%
• Chemical Specie 20%
• Flow Kinetics 20%
• Heat Transfer 20%
• Desorption 20%