Abstract
Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to nhigh/nlow ∼ 1.9. We confirm this threshold by measuring a complete photonic bandgap in the infrared region in Sn–S–O (n ∼ 1.9) and Ge–Sb–S–O (n ∼ 2) inverse rod-connected diamond structures. The structures were fabricated using a low-temperature chemical vapor deposition process via a single-inversion technique. This provides a reliable fabrication technique of complete photonic bandgap materials and expands the library of backfilling materials, leading to a wide range of future photonic applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1248-1254 |
| Number of pages | 7 |
| Journal | ACS Photonics |
| Volume | 6 |
| Issue number | 5 |
| Early online date | 9 Apr 2019 |
| DOIs | |
| Publication status | Published - 15 May 2019 |
Keywords
- direct laser writing
- two-photon lithography
- chemical vapor deposition
- chalcogenide materials
- photonic bandgap
- three-dimensional photonic crystals