Optical properties of high quality Cu2ZnSnSe4 thin films

Franziska Luckert; David Hamilton; Michael Yakushev; Neil Beattie; Guillaume Zoppi; Matthew Moynihan; Ian Forbes; Anatoli Karotki; Alexandre Mudryi; Maarja Grossberg; Jüri Krustok; Robert Martin

doi:10.1063/1.3624827

Optical properties of high quality Cu2ZnSnSe4 thin films

Franziska Luckert, David Hamilton, Michael Yakushev, Neil Beattie, Guillaume Zoppi, Matthew Moynihan, Ian Forbes, Anatoli Karotki, Alexandre Mudryi, Maarja Grossberg, Jüri Krustok, Robert Martin

Research output: Contribution to journal › Article › peer-review

100 Citations (Scopus)

Abstract

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

Original language	English
Journal	Applied Physics Letters
Volume	99
Issue number	6
DOIs	https://doi.org/10.1063/1.3624827
Publication status	Published - 9 Aug 2011

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title = "Optical properties of high quality Cu2ZnSnSe4 thin films",

abstract = "Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra",

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T1 - Optical properties of high quality Cu2ZnSnSe4 thin films

AU - Luckert, Franziska

AU - Hamilton, David

AU - Yakushev, Michael

AU - Beattie, Neil

AU - Zoppi, Guillaume

AU - Moynihan, Matthew

AU - Forbes, Ian

AU - Karotki, Anatoli

AU - Mudryi, Alexandre

AU - Grossberg, Maarja

AU - Krustok, Jüri

AU - Martin, Robert

N1 - Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2011/8/9

Y1 - 2011/8/9

N2 - Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

AB - Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

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DO - 10.1063/1.3624827

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SN - 0003-6951

VL - 99

JO - Applied Physics Letters

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Optical properties of high quality Cu2ZnSnSe4 thin films

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