Optimizing MOM diode performance via the oxidation technique

L.E. Dodd; Andrew Gallant; David Wood

doi:10.1109/ICSENS.2011.6127347

Optimizing MOM diode performance via the oxidation technique

L.E. Dodd, Andrew Gallant, David Wood

Mathematics, Physics and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.

Original language	English
Title of host publication	2011 IEEE Sensors
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	176-179
Number of pages	4
ISBN (Electronic)	978-1-4244-9289-3
ISBN (Print)	978-1-4244-9290-9
DOIs	https://doi.org/10.1109/ICSENS.2011.6127347
Publication status	Published - 2011

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10.1109/ICSENS.2011.6127347

8 Citations
1 Article

Conduction mechanisms in metal/self-assembled monolayer/metal junction
Etor, D., Dodd, L. E., Balocco, C. & Wood, D., 26 Jun 2019, In: Micro and Nano Letters. 14, 7, p. 808-811
Research output: Contribution to journal › Article › peer-review

Open Access
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Cite this

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title = "Optimizing MOM diode performance via the oxidation technique",

abstract = "This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.",

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AU - Dodd, L.E.

AU - Gallant, Andrew

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N2 - This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.

AB - This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.

U2 - 10.1109/ICSENS.2011.6127347

DO - 10.1109/ICSENS.2011.6127347

M3 - Conference contribution

SN - 978-1-4244-9290-9

SP - 176

EP - 179

BT - 2011 IEEE Sensors

PB - IEEE

CY - Piscataway, NJ

ER -

Optimizing MOM diode performance via the oxidation technique

Abstract

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Research output

Conduction mechanisms in metal/self-assembled monolayer/metal junction

Cite this