p-type Cu3BiS3 thin films for solar cell absorber layer via one stage thermal evaporation

Arshad Hussain, Jing Ting Luo, Ping Fan, Guangxing Liang, Zhenghua Su, R. Ahmed, Nisar Ali, Qiuping Wei, Shabbir Muhammad, Aijaz Rasool Chaudhry, Yong Qing Fu

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Abstract

Ternary copper sulphides, especially copper-bismuth-sulphide (Cu-Bi-S), are alternative solar absorber materials due to their earth-abundant and non-toxic constituent elements, compared to the conventional copper indium gallium sulphide and cadmium telluride films. In this study, Cu-Bi-S thin films were deposited onto soda lime glass substrates using a one stage co-evaporation process from Cu2S and Bi2S3 sources, with the deposition temperatures varied from room temperature to 400°C. X-ray diffraction analysis confirmed that Cu3BiS3 was the dominant phase in the Cu-rich films, and the crystalline quality of the films was significantly improved with increasing the deposition temperature. An optical bandgap of 1.4 eV was achieved for the film deposited at 400°C, which demonstrated a Hall mobility of 3.95 cm2/V-s and a carrier concentration of 7.48 × 1016 cm-3. Cu3BiS3 films deposited at 375 and 400°C were implemented into superstrate solar cell structures (glass/ITO/n-CdS/p-Cu3BiS3/Al).
Original languageEnglish
Article number144597
Number of pages7
JournalApplied Surface Science
Volume505
Early online date5 Nov 2019
DOIs
Publication statusPublished - 1 Mar 2020

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