Phase transition and microstructure change in Ta–Zr alloy films by co-sputtering

Z. Z. Tang, Jang-Hsing Hsieh, Shanyong Zhang, C. Li, Yong Qing Fu

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    Ta–Zr Thin films with wide range of compositions were deposited on Si (100) substrate by co-sputtering. RF bias power from 0 to 80 W was applied during deposition. Films were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and four-point probe. Result showed the incorporation of Zr caused the formation of low-resistivity BCC Ta, which made the resistivity of Ta–Zr films decrease. With substrate bias increasing, the compositional range for forming amorphous structure shrank. The effects of both thermodynamics and kinetics on Ta–Zr amorphization tendency were discussed.
    Original languageEnglish
    Pages (from-to)110-113
    JournalSurface and Coatings Technology
    Volume198
    Issue number1-3
    DOIs
    Publication statusPublished - 1 Aug 2005

    Keywords

    • Co-sputtering
    • Ta–Zr
    • Amorphization

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