Phenomenon of Short-Time Threshold Voltage Shift and Its Application in Junction Temperature Estimation

Xiang Wang, Haimeng Wu, Volker Pickert

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Abstract

Silicon carbide (SiC) has seen tremendous advancement in high-efficiency, high-frequency, and high-temperature applications during recent years. However, the gate oxide of SiC MOSFET is reported to be less reliable compared with its Si counterpart, introducing the problem of threshold voltage (Vth) shift. Recent publications have investigated Vth shift which are mainly based on the long-time scale ranging from seconds to several days. However, the Vth shift in a shorter time scale has not been widely discussed and studied due to its high bandwidth requirement in measurement. This paper proposed an investigation into the short-time Vth shift using a developed current-controlled gate driver. The phenomenon of short-time Vth shift is captured and analyzed, which shows that it occurs within the first microsecond of the gate voltage being applied. Moreover, a modelling approach using the logarithm equation is proposed to describe the relationship between the short-time Vth shift and the gate stress time. Experiments are conducted under different temperatures, illustrating the temperature dependency of the short-time Vth shift process.
Original languageEnglish
Title of host publication2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)
Place of PublicationPiscataway, US
PublisherIEEE
Number of pages5
ISBN (Electronic)9781665413602
ISBN (Print)9781665413619, 9781665413596
DOIs
Publication statusPublished - 13 Nov 2021
Event1st IEEE International Power Electronics and Application Symposium - Shanghai, China
Duration: 12 Nov 202115 Nov 2021

Conference

Conference1st IEEE International Power Electronics and Application Symposium
Abbreviated titleIEEE PEAS'2021
Country/TerritoryChina
CityShanghai
Period12/11/2115/11/21

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