TY - JOUR
T1 - Photovoltaic Performance of Phase-Pure Orthorhombic BiSI Thin-Films
AU - Tiwari, Devendra
AU - Cardoso-Delgado, Fabiola
AU - Alibhai, Dominic
AU - Mombru, Maia
AU - Fermin, David J.
N1 - Funding Information:
D.T. and D.J.F. thank the U.K. Engineering and Physical Sciences Research Council (EPSRC) for supporting this work through PVTEAM Grant (EP/L017792/1). F.C.D. acknowledges the financial support from Mexico’s Consejo Nacional de Ciencia y Tecnologıá (CONACyT) while M.M. is grateful to the support from Chevening Scholarships, the U.K. government’s global scholarship program, funded by the Foreign and Commonwealth Office (FCO) and partner organizations. D.T. and D.J.F. also acknowledge the fruitful discussions with Prof. N. C. Norman (School of Chemistry, University of Bristol). Scanning electron microscopy and electrochemical impedance spectroscopy were carried out with instrumentation supported by the EPSRC capital grant (EP/K035746/1). Time-resolved PL was carried out at the Wolfson Bioimaging Facility with a fluorescence lifetime imaging microscope (FLIM) acquired under BBSRC/EPSRC-funded Synthetic Biology Research Centre grant L01386X. We are also grateful to the University of Bristol’s supercomputing facilities at the Advanced Computing Research Centre for enabling the computational work.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/5/28
Y1 - 2019/5/28
N2 - A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G
0W
0@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: Glass/FTO/SnO
2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32% under AM 1.5 illumination.
AB - A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G
0W
0@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: Glass/FTO/SnO
2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32% under AM 1.5 illumination.
KW - Absorption
KW - thin films
KW - Electrical conductivity
KW - Electronic structure
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=85066339075&partnerID=8YFLogxK
U2 - 10.1021/acsaem.9b00544
DO - 10.1021/acsaem.9b00544
M3 - Article
SN - 2574-0962
VL - 2
SP - 3878
EP - 3885
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 5
ER -
