Photovoltaic properties of SnS based solar cells

Kotte Ramakrishna Reddy; Robert Miles; N. Koteswara Reddy

doi:10.1016/j.solmat.2006.06.012

Photovoltaic properties of SnS based solar cells

Kotte Ramakrishna Reddy, Robert Miles, N. Koteswara Reddy

Research output: Contribution to journal › Article › peer-review

537 Citations (Scopus)

Abstract

Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 °C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 ? cm with an optical energy band gap (Eg) of 1.32 eV. Heterojunction solar cells were fabricated using sprayed SnS as the absorber layer and indium doped cadmium sulphide as the window layer and the devices were characterised to evaluate the junction properties as well as the solar cell performance. The current transport across the junction has been modelled as a combination of tunnelling and recombination. The best devices had solar conversion efficiencies of 1.3% with a quantum efficiency of 70%

Original language	English
Pages (from-to)	3041-3046
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	18-19
DOIs	https://doi.org/10.1016/j.solmat.2006.06.012
Publication status	Published - Nov 2006

Keywords

Photovoltaic power generation
Solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2006.06.012

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@article{e297b502b38a4acd96476441948e706e,

title = "Photovoltaic properties of SnS based solar cells",

abstract = "Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 °C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 ? cm with an optical energy band gap (Eg) of 1.32 eV. Heterojunction solar cells were fabricated using sprayed SnS as the absorber layer and indium doped cadmium sulphide as the window layer and the devices were characterised to evaluate the junction properties as well as the solar cell performance. The current transport across the junction has been modelled as a combination of tunnelling and recombination. The best devices had solar conversion efficiencies of 1.3% with a quantum efficiency of 70%",

keywords = "Photovoltaic power generation, Solar cells",

author = "{Ramakrishna Reddy}, Kotte and Robert Miles and {Koteswara Reddy}, N.",

note = "Dr. Reddy (from Sri Venkaswara University, India) was funded by the Royal Society /and the Indian National Science Academy (INSA ). Invitation to India Day at the Royal Society by President of Royal Society as recognition of importance of Indo-UK collaboration. (Speakers included the chief scientific adviser to the government). Part of the joint work was to develop thin film solar cells based on the use of SnS as a novel alternative to CdTe and CIGS. This paper was also presented at the PVSEC conference in Bangkok in 2003 (the leading PV conference on photovoltaics in Asia).",

year = "2006",

month = nov,

doi = "10.1016/j.solmat.2006.06.012",

language = "English",

volume = "90",

pages = "3041--3046",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "18-19",

}

TY - JOUR

T1 - Photovoltaic properties of SnS based solar cells

AU - Ramakrishna Reddy, Kotte

AU - Miles, Robert

AU - Koteswara Reddy, N.

N1 - Dr. Reddy (from Sri Venkaswara University, India) was funded by the Royal Society /and the Indian National Science Academy (INSA ). Invitation to India Day at the Royal Society by President of Royal Society as recognition of importance of Indo-UK collaboration. (Speakers included the chief scientific adviser to the government). Part of the joint work was to develop thin film solar cells based on the use of SnS as a novel alternative to CdTe and CIGS. This paper was also presented at the PVSEC conference in Bangkok in 2003 (the leading PV conference on photovoltaics in Asia).

PY - 2006/11

Y1 - 2006/11

N2 - Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 °C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 ? cm with an optical energy band gap (Eg) of 1.32 eV. Heterojunction solar cells were fabricated using sprayed SnS as the absorber layer and indium doped cadmium sulphide as the window layer and the devices were characterised to evaluate the junction properties as well as the solar cell performance. The current transport across the junction has been modelled as a combination of tunnelling and recombination. The best devices had solar conversion efficiencies of 1.3% with a quantum efficiency of 70%

AB - Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 °C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 ? cm with an optical energy band gap (Eg) of 1.32 eV. Heterojunction solar cells were fabricated using sprayed SnS as the absorber layer and indium doped cadmium sulphide as the window layer and the devices were characterised to evaluate the junction properties as well as the solar cell performance. The current transport across the junction has been modelled as a combination of tunnelling and recombination. The best devices had solar conversion efficiencies of 1.3% with a quantum efficiency of 70%

KW - Photovoltaic power generation

KW - Solar cells

U2 - 10.1016/j.solmat.2006.06.012

DO - 10.1016/j.solmat.2006.06.012

M3 - Article

SN - 0927-0248

VL - 90

SP - 3041

EP - 3046

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 18-19

ER -

Photovoltaic properties of SnS based solar cells

Abstract

Keywords

UN SDGs

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