Photovoltaic properties of SnS based solar cells

Kotte Ramakrishna Reddy, Robert Miles, N. Koteswara Reddy

    Research output: Contribution to journalArticlepeer-review

    444 Citations (Scopus)

    Abstract

    Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 °C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 ? cm with an optical energy band gap (Eg) of 1.32 eV. Heterojunction solar cells were fabricated using sprayed SnS as the absorber layer and indium doped cadmium sulphide as the window layer and the devices were characterised to evaluate the junction properties as well as the solar cell performance. The current transport across the junction has been modelled as a combination of tunnelling and recombination. The best devices had solar conversion efficiencies of 1.3% with a quantum efficiency of 70%
    Original languageEnglish
    Pages (from-to)3041-3046
    JournalSolar Energy Materials and Solar Cells
    Volume90
    Issue number18-19
    DOIs
    Publication statusPublished - Nov 2006

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