Progress in the development of a InAs/GaAs quantum dot solar cell

Neil Beattie, Guillaume Zoppi, Ian Farrer, Patrick See, Dominique Morrison, Robert Miles, David Ritchie

Research output: Contribution to conferencePaper

Abstract

InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.
Original languageEnglish
Publication statusPublished - 25 Apr 2014
Event10th Photovoltaic Science Applications and Technology (PVSAT-10) - Loughborough, UK
Duration: 25 Apr 2014 → …
http://www.pvsat.org.uk/

Conference

Conference10th Photovoltaic Science Applications and Technology (PVSAT-10)
Period25/04/14 → …
Internet address

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