Progress in the development of a InAs/GaAs quantum dot solar cell

Neil Beattie; Guillaume Zoppi; Ian Farrer; Patrick See; Dominique Morrison; Robert Miles; David Ritchie

Progress in the development of a InAs/GaAs quantum dot solar cell

Neil Beattie, Guillaume Zoppi, Ian Farrer, Patrick See, Dominique Morrison, Robert Miles, David Ritchie

Mathematics, Physics and Electrical Engineering

Research output: Contribution to conference › Paper

Abstract

InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.

Original language	English
Publication status	Published - 25 Apr 2014
Event	10th Photovoltaic Science Applications and Technology (PVSAT-10) - Loughborough, UK Duration: 25 Apr 2014 → … http://www.pvsat.org.uk/

Conference

Conference	10th Photovoltaic Science Applications and Technology (PVSAT-10)
Period	25/04/14 → …
Internet address	http://www.pvsat.org.uk/

Cite this

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title = "Progress in the development of a InAs/GaAs quantum dot solar cell",

abstract = "InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.",

author = "Neil Beattie and Guillaume Zoppi and Ian Farrer and Patrick See and Dominique Morrison and Robert Miles and David Ritchie",

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T1 - Progress in the development of a InAs/GaAs quantum dot solar cell

AU - Beattie, Neil

AU - Zoppi, Guillaume

AU - Farrer, Ian

AU - See, Patrick

AU - Morrison, Dominique

AU - Miles, Robert

AU - Ritchie, David

PY - 2014/4/25

Y1 - 2014/4/25

N2 - InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.

AB - InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.

M3 - Paper

T2 - 10th Photovoltaic Science Applications and Technology (PVSAT-10)

Y2 - 25 April 2014

ER -

Progress in the development of a InAs/GaAs quantum dot solar cell

Abstract

Conference

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