InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.
|Publication status||Published - 25 Apr 2014|
|Event||10th Photovoltaic Science Applications and Technology (PVSAT-10) - Loughborough, UK|
Duration: 25 Apr 2014 → …
|Conference||10th Photovoltaic Science Applications and Technology (PVSAT-10)|
|Period||25/04/14 → …|