Quaternary Cu2ZnSnSe4 thin films for solar cells applications

Guillaume Zoppi; Ian Forbes; Robert Miles; Phillip Dale; Jonathan Scragg; Laurence Peter

Quaternary Cu2ZnSnSe4 thin films for solar cells applications

Guillaume Zoppi, Ian Forbes, Robert Miles, Phillip Dale, Jonathan Scragg, Laurence Peter

Mathematics, Physics and Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5.684 Ã… and c = 11.353 Ã…) with an electronic bandgap of 0.9 eV. Solar cells with the structure were fabricated with device efficiencies up to 3.2%.

Original language	English
Publication status	Published - 2009
Event	5th Photovoltaic Science Applications and Technology (PVSAT-5) - Glyndŵr University, Wrexham, UK Duration: 1 May 2009 → … http://www.pvsat.org.uk/PVSAT-5%20_Programme_FINAL.pdf

Conference

Conference	5th Photovoltaic Science Applications and Technology (PVSAT-5)
Period	1/05/09 → …
Internet address	http://www.pvsat.org.uk/PVSAT-5%20_Programme_FINAL.pdf

Cite this

@conference{fc0b8e02c4f847a6adea34d9edc5d043,

title = "Quaternary Cu2ZnSnSe4 thin films for solar cells applications",

abstract = "Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5.684 {\~A}… and c = 11.353 {\~A}…) with an electronic bandgap of 0.9 eV. Solar cells with the structure were fabricated with device efficiencies up to 3.2%.",

author = "Guillaume Zoppi and Ian Forbes and Robert Miles and Phillip Dale and Jonathan Scragg and Laurence Peter",

year = "2009",

language = "English",

note = "5th Photovoltaic Science Applications and Technology (PVSAT-5) ; Conference date: 01-05-2009",

url = "http://www.pvsat.org.uk/PVSAT-5%20_Programme_FINAL.pdf",

}

TY - CONF

T1 - Quaternary Cu2ZnSnSe4 thin films for solar cells applications

AU - Zoppi, Guillaume

AU - Forbes, Ian

AU - Miles, Robert

AU - Dale, Phillip

AU - Scragg, Jonathan

AU - Peter, Laurence

PY - 2009

Y1 - 2009

N2 - Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5.684 Ã… and c = 11.353 Ã…) with an electronic bandgap of 0.9 eV. Solar cells with the structure were fabricated with device efficiencies up to 3.2%.

AB - Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5.684 Ã… and c = 11.353 Ã…) with an electronic bandgap of 0.9 eV. Solar cells with the structure were fabricated with device efficiencies up to 3.2%.

M3 - Paper

T2 - 5th Photovoltaic Science Applications and Technology (PVSAT-5)

Y2 - 1 May 2009

ER -

Quaternary Cu2ZnSnSe4 thin films for solar cells applications

Abstract

Conference

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