Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Michael Yakushev; Jose Márquez-Prieto; Ian Forbes; Paul Edwards; V.D. Zhivulko; Alexandre Mudryi; Jüri Krustok; Robert Martin

doi:10.1088/0022-3727/48/47/475109

Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Michael Yakushev, Jose Márquez-Prieto, Ian Forbes, Paul Edwards, V.D. Zhivulko, Alexandre Mudryi, Jüri Krustok, Robert Martin

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Abstract

Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

Original language	English
Article number	475109
Journal	Journal of Physics D: Applied Physics
Volume	48
Issue number	47
Early online date	2 Nov 2015
DOIs	https://doi.org/10.1088/0022-3727/48/47/475109
Publication status	Published - 2 Dec 2015

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@article{4d4dcea623304747bc9a642cafa89c36,

title = "Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess",

abstract = "Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1\%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.",

author = "Michael Yakushev and Jose M{\'a}rquez-Prieto and Ian Forbes and Paul Edwards and V.D. Zhivulko and Alexandre Mudryi and J{\"u}ri Krustok and Robert Martin",

year = "2015",

month = dec,

day = "2",

doi = "10.1088/0022-3727/48/47/475109",

language = "English",

volume = "48",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "47",

}

TY - JOUR

T1 - Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

AU - Yakushev, Michael

AU - Márquez-Prieto, Jose

AU - Forbes, Ian

AU - Edwards, Paul

AU - Zhivulko, V.D.

AU - Mudryi, Alexandre

AU - Krustok, Jüri

AU - Martin, Robert

PY - 2015/12/2

Y1 - 2015/12/2

N2 - Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

AB - Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

UR - https://www.scopus.com/pages/publications/84947093699

U2 - 10.1088/0022-3727/48/47/475109

DO - 10.1088/0022-3727/48/47/475109

M3 - Article

SN - 0022-3727

SN - 1361-6463

VL - 48

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 47

M1 - 475109

ER -

Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Abstract

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