Abstract
Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mechanically stressed silicon microstructures. Data are presented as strain images with a spatial resolution of around 0.8 µm. A useful correlation is demonstrated between finite-element analysis calculations of volumetric strain and Raman shift. The results demonstrate that silicon beam structures incorporating a 90° bend will experience a non-uniform stress distribution along the bend radius for small radii of curvature.
| Original language | English |
|---|---|
| Pages (from-to) | 7-12 |
| Number of pages | 6 |
| Journal | Journal of micromechanics and microengineering. |
| Volume | 11 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 2001 |
Keywords
- Crystalline silicon
- Cubic-crystals
- Stress
- Spectroscopy
- Frequencies
- Phonons