Abstract
In this paper, we report a study on time-domain capacitance characterization of metal–oxide–semiconductor (MOS) structures with Si nanocrystals (nc-Si) distributing throughout the gate oxide. A drastic reduction of MOS capacitance can be observed by charge trapping in nc-Si, while release of the charges leads to the recovery of the capacitance. Such capacitance modulation is explained by an equivalent circuit in terms of the change of nc-Si capacitance as a result of charging/discharging. As the capacitance modulation represents a change in the electrical states of MOS structure, it could be used for memory applications.
Original language | English |
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Pages (from-to) | 1119-1122 |
Journal | Nanotechnology |
Volume | 16 |
Issue number | 8 |
DOIs | |
Publication status | Published - 17 May 2005 |