Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric

Yang Liu, Tu Pei Chen, C. Y. Ng, Man Siu Tse, P. Zhao, Yong Qing Fu, Sam Zhang, Steve Fung

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this paper, we report a study on time-domain capacitance characterization of metal–oxide–semiconductor (MOS) structures with Si nanocrystals (nc-Si) distributing throughout the gate oxide. A drastic reduction of MOS capacitance can be observed by charge trapping in nc-Si, while release of the charges leads to the recovery of the capacitance. Such capacitance modulation is explained by an equivalent circuit in terms of the change of nc-Si capacitance as a result of charging/discharging. As the capacitance modulation represents a change in the electrical states of MOS structure, it could be used for memory applications.
Original languageEnglish
Pages (from-to)1119-1122
JournalNanotechnology
Volume16
Issue number8
DOIs
Publication statusPublished - 17 May 2005

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