Scalable silicon nanowire photodetectors

Peyman Servati; Alan Colli; S. Hofmann; Yong Qing Fu; Paul Beecher; Z. A. K. Durrani; Andrea Ferrari; Andrew Flewitt; J. Robertson; William Milne

doi:10.1016/j.physe.2006.12.054

Scalable silicon nanowire photodetectors

Peyman Servati, Alan Colli, S. Hofmann, Yong Qing Fu, Paul Beecher, Z. A. K. Durrani, Andrea Ferrari, Andrew Flewitt, J. Robertson, William Milne

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.

Original language	English
Pages (from-to)	64-66
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	38
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.12.054
Publication status	Published - Apr 2007

Keywords

Nanowires
Nanocomposites
Photodetectors
Schottky diodes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.physe.2006.12.054

Cite this

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title = "Scalable silicon nanowire photodetectors",

abstract = "This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.",

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T1 - Scalable silicon nanowire photodetectors

AU - Servati, Peyman

AU - Colli, Alan

AU - Hofmann, S.

AU - Fu, Yong Qing

AU - Beecher, Paul

AU - Durrani, Z. A. K.

AU - Ferrari, Andrea

AU - Flewitt, Andrew

AU - Robertson, J.

AU - Milne, William

PY - 2007/4

Y1 - 2007/4

N2 - This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.

AB - This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.

KW - Nanowires

KW - Nanocomposites

KW - Photodetectors

KW - Schottky diodes

UR - https://www.scopus.com/pages/publications/34147158878

U2 - 10.1016/j.physe.2006.12.054

DO - 10.1016/j.physe.2006.12.054

M3 - Article

SN - 1386-9477

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EP - 66

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

ER -

Scalable silicon nanowire photodetectors

Abstract

Keywords

UN SDGs

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