SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells

Rachael Rowlands-Jones; Stuart Irvine; Vincent Barrioz; E. W. Jones; Daniel Lamb

doi:10.1088/0268-1242/23/1/015017

SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells

Rachael Rowlands-Jones, Stuart Irvine, Vincent Barrioz, E. W. Jones, Daniel Lamb

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.

Original language	English
Pages (from-to)	015017
Journal	Semiconductor Science and Technology
Volume	23
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/23/1/015017
Publication status	Published - 13 Dec 2007

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10.1088/0268-1242/23/1/015017

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abstract = "A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.",

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AU - Rowlands-Jones, Rachael

AU - Irvine, Stuart

AU - Barrioz, Vincent

AU - Jones, E. W.

AU - Lamb, Daniel

PY - 2007/12/13

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N2 - A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.

AB - A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.

U2 - 10.1088/0268-1242/23/1/015017

DO - 10.1088/0268-1242/23/1/015017

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

ER -

SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells

Abstract

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