SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells

Rachael Rowlands-Jones, Stuart Irvine, Vincent Barrioz, E. W. Jones, Daniel Lamb

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.
Original languageEnglish
Pages (from-to)015017
JournalSemiconductor Science and Technology
Volume23
Issue number1
DOIs
Publication statusPublished - 13 Dec 2007

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